中国空间科学技术

中国空间科学技术 ›› 2022, Vol. 42 ›› Issue (6): 140-148.doi: 10.16708/j.cnki.1000-758X.2022.0093

• 论文 • 上一篇    

新型高速单粒子翻转自恢复锁存器设计

刘中阳，张海能，杨旭，张正选，胡志远，毕大炜   

  1. 1 中国科学院上海微系统与信息技术研究所，上海200050
    2 中国科学院大学，北京100049
    3 华天科技（昆山）电子有限公司，昆山215300
  • 出版日期:2022-12-25 发布日期:2022-11-09

A novel high-speed single-event-upset self-recoverable latch design

LIU Zhongyang，ZHANG Haineng，YANG Xu, ZHANG Zhengxuan，Hu Zhiyuan，BI Dawei   

  1. 1 Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，
    Shanghai 200050,China
    2 University of Chinese Academy of Sciences，Beijing 100049，China
    3 Huatian Technology (Kunshan)Electronics Co.，Ltd.，Kunshan 215300，China
  • Published:2022-12-25 Online:2022-11-09

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摘要： 航天器中芯片工作时钟频率的不断提高使得单粒子翻转(single-event-upset,SEU)效应对时序逻辑的影响更加显著。目前已经提出的辐射加固锁存器存在面积和延时较大、功耗较高且抗单粒子翻转能力有限的问题。针对这些问题，提出了一款基于130nm部分耗尽绝缘体上硅(partially-depleted silicon on insulator,PDSOI)工艺的高速单粒子辐射自恢复锁存器。在对电路设计进行介绍的基础上，与其他已经报道的电路进行了对比，并利用节点翻转分析和仿真波形验证了该锁存器具有抗单粒子翻转自恢复的功能。对比结果表明，与其他的抗单粒子翻转自恢复锁存器相比，在牺牲部分功耗的代价下，大幅减小了锁存器的面积和延时。本方案所提出的辐射加固锁存器的综合开销指标APDP较其他辐射加固锁存器平均节省了71.14%，适用于辐射环境下的对速度和可靠性有较高要求的电路，为国产宇航高可靠自研芯片提供了选择。

关键词: 部分耗尽绝缘体上硅, 单粒子效应, 单粒子翻转, 辐射加固设计, 辐射加固锁存器

Abstract:  The continuous improvement of the clock frequency of integrated circuits in spacecraft makes the influence of single-event-upset (SEU)on sequential logic become more and more severe,so there is an urgent need to design highly reliable circuits for aerospace applications.Most of the published radiation-hardened latches do not have self-recoverable internal nodes after being affected by a SEU,what′s worse is that they also have high overhead in area,power consumption and delay.In order to solve these problems,a novel highspeed single-event-upset self-recoverable latch based on 130nm partially-depleted silicon on insulator (PD-SOI),combined with radiation-hardened design was proposed.The working principle and simulation results have validated the SEU self-recoverable ability of the proposed latch.Compared with the other self-recoverable latches,the proposed latch greatly reduced the area and delay at the expense of partial power consumption.Detailed comparisons demonstrate that our design saves 71.14% area-powerdelay product (APDP)on average compared with other considered radiation-hardened latches,which means the proposed latch is a promising candidate for future highly reliable advanced aerospace applications.

Key words: PD-SOI, single-event-effect, single-event-upset, radiation hardened by design, radiation hardened latches