中国空间科学技术

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VO_2薄膜制备工艺及电阻开关特性研究

许旻,邱家稳,赵印中,王洁冰,何延春,李强勇   

  1. 兰州物理研究所,兰州物理研究所,兰州物理研究所,兰州物理研究所,兰州物理研究所,兰州物理研究所 兰州730000 ,兰州730000 ,兰州730000 ,兰州730000 ,兰州730000 ,兰州730000
  • 发布日期:2001-12-25

Vanadium Dioxide Films Technique and Electrical Switching Property

Xu Min Qiu Jiawen Zhao Yinzhong Wang Jiebing He Yanchun Li Qiangyong (Lanzhou Institute of Physics,Lanzhou 730000)   

  • Published:2001-12-25

摘要： 用溶胶 -凝胶法在非晶玻璃上制备 VO2 薄膜 ,经过熔融、涂膜、烘干和热处理等工艺最后得到电阻相变 2～ 3个量级的 VO2 薄膜。对烘干温度、熔融温度、膜厚和热处理温度对薄膜电阻开关特性的影响进行了研究。通过 XRD ( X-ray diffraction)和 XPS ( X- ray photoelectron spectroscopy)对薄膜的结构和价态进行分析 ,表明用溶胶 -凝胶法制备 VO2 膜工艺简单 ,重复性好。

关键词: 膜, 样品制备, 电子开关, 性能分析

Abstract: A sol gel method is described for preparing high quality vanadium dioxide thin films which exhibit an abrupt resistivity change of 2~3 order of magnitude at about 60℃~80℃ on non crystal substrate.The method consists of four processes:quenching, coating ,drying and vacuum heat treatment.These processes show strong effects on the properties of the final film.The effects of the drying process on the film blistering and the effects of film thickness,quenching temperature,and heat treatment time on the resistivity switching property are studied.XRD (x ray diffraction), XPS (x ray photoelectron spectroscopy) are utilized to study the drying process,structure and characterize the films.