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半导体器件单粒子效应的机理、试验和预计

孟庆茹,赵大鹏,鲍百容   

  1. 北京卫星环境工程研究所 ,北京卫星环境工程研究所 ,北京卫星环境工程研究所
  • 发布日期:1993-08-25

MECHANISM TEST AND PREDICTION OF EFFECTS OF SINGLE EVENT ON SEMICONDUCTOR DEVICE

Meng Qingru Zhao Dapeng Bao Bairong (Beijing Institute of Satellite Environment Engineering)   

  • Published:1993-08-25

摘要: 介绍了空间高能粒子环境及单粒子效应的机理、模拟试验方法和错误率计算方法。空间高能粒子环境由银河宇宙射线、太阳宇宙射线及地磁捕获粒子组成。单个高能粒子可在半导体中通过库仑作用或核反应电离出大量电子—空穴对,从而引起半导体器件逻辑紊乱或失效。用加速器产生的高能粒子进行模拟试验可获得器件对单粒子效应的敏感参数;由E.L.Peterson 等人的经验公式或CREME 程序预计器件在特定环境下的出错率。

关键词: 辐射效应, 半导体器件, 粒子加速器, 模拟试验, 分析

Abstract: The space highly-energetic-particle environment and themechanism,test and prediction of the effects induced by a single particleare introduced.The space particle environment is composed of galactic co-smic rays,solar flares and geomagnetically-trapped particles.Energeticparticles penetrating into semiconductor devices can cause single eventphenomena including SEU,SEL and SEB The available test facilities include Cali fornium-252,Van de Graff accelerator and cyclotron.Peter-son's experimental formula or program CREME can be used to predictthe error rate under a certain environmental condition.