中国空间科学技术

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高能离子辐照下薄膜界面化学结合增强的模型

杨得全   

  1. 兰州物理研究所
  • 发布日期:1992-08-25

A MODEL FOR INTERFACIAL CHEMICAL BINDING ENHANCEMENT OF THIN FILM BY MeV ION IRRADIATION

Yang Dequan (Lanzhou Institute of Physics)   

  • Published:1992-08-25

摘要： 近年来高能离子辐照引起的薄膜附着力增强现象及其应用受到了广泛的重视。由于高能离子一固体相互作用的复杂性,目前对附着力增强的物理机制的认识还不清楚。文章基于高能离子辐照引起界面原子化学结合键增强的思想,建立了薄膜附着力增强的理论模型,并由此得到辐照离子阈剂量与离子能量损失(电子阻止能力)及其界面原子结合键能的分析表达式,计算结果与实验结果很好吻合。理论分析表达式说明,膜附着力增强的阈剂量受界面原子结构、元素种类、电子阻止能力及其形成固体径迹所损失的能量等多种因素有关。

关键词: 薄膜, 界面, 附着力, 离子辐照, 研究

Abstract: Theortical model,based on concepts of the formation of newinterfacial bonds,for the adhesion enhancement of thin film induced byMeV ion irradiation have been proposed in this paper.A new analyticalrelationship of the threshold doses,including ion track density,electronicstopping power and interfacial bond energy etc.has been given.It is foundthat the calculating results by using the model is in good agreement withthe experiment results reported by literatures.

Key words: Thin film, Interface, Adhesion, Ion irradiation, Research