关键词: 二次电子发射, 规则形貌, 二次电子产额, 二次电子能谱, 出射角分布

Abstract: It has been applied in many fields to customize specific surface morphology to control secondary electron emission of materials.The regular surface morphology can easily reveal the influence of the suppression and the influence mechanism on the secondary electron emission. Meanwhile, photolithography, plasma etching and other processes can better achieve the specific design of regular morphology. Therefore, custom regular morphology is often used in the initial research stage of multipactor or in the process of principle experimental verification. Taking the threedimensional cylindrical hole as an example, multi-generation Monte Carlo method which considers multiple interactions between electrons and complex surface morphology was used to systematically study the influence of regular morphology parameters such as depthwidth ratio and duty cycle ratio on secondary electron yield (SEY), secondary electron spectrum (SES) and emission angle distribution. It was found that the larger the depthwidth ratio of regular morphology is, the wider the SES broadening, the stronger the selectivity of the morphology to emission angle, and the better restraint effect of SEY, but the restraint effect is not indefinite. When the morphology does not overlap, SEY can also be effectively reduced by increasing the duty cycle ratio. However, due to the relatively small proportion of emitted electrons of the cylindrical hole compared with flat surface, the SES and the emission angle distribution is close to flat surface. The secondary electron emission properties of regular morphology obtained in the paper provide a reference for the comprehensive evaluation of its influence on multipactor effect.

Key words: secondary electron emission, regular morphology, secondary electron yield, secondary electron spectrum, emission angle distribution