Abstract: iB2 films are deposited onto copper and silicon substrates byIon Beam Enhancement Deposition.The oxidation resistance in air at 600 C,700℃ and 800 C and the electrochemical corrosion resistance in 1N H12So4 aqueous solution of these films are measured.SEM,AES and XRD are employed toinvestigate the morphology,the chemical composition distribution and the microstructure.It is concluded that,1)the TiB2 films by IBED are of good oxidation resistance in high temperature air and of good corrosion resistance in 1NH2SO4 aqueous solution;2)the oxidation and corrosion resistance of the filmsdeposited under the bombardment of enbancement ion beam are better than thatdeposited without the bombardment;3)the bombardment of enhancement ionbeam promotes the formation of TiB2 crystalline particles in their amorphousfilms.