›› 2017, Vol. 37 ›› Issue (4): 75-83.doi: 10.16708/j.cnki.1000-758X.2017.0065

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Researchongammaraysirradiationresistancepropertiesoftransparentconductiveoxidethinfilms

 OUYANG Qi , WANG  Wen-Wen*, HAO  Wei-Chang   

  1. SchoolofPhysicsandNuclearEnergyEngineering,BeihangUniversity,Beijing100191, China
  • Received:2016-12-29 Revised:2017-02-19 Published:2017-08-25 Online:2017-06-29

Abstract: Tungstendopedindiumoxidethinfilms(In2O3: W,IWO)withgoodopticalandelectricalpropertieswerepreparedonglasssubstratesbyradiofrequency(RF)reactivemagnetronsputteringmethod.Tindopedindiumoxidethinfilms(In2O3:  Sn,ITO)werepurchasedindustrialproduction.Allthesefilmswereirradiatedbygammarayswithdifferentamountoffluxinagroundbasedsimulationsystemclosetotheenvironmentofdeepspace.Changesincharacteristicsincludingmicrostructure,surfacemorphology,chemicalstates,opticalandelectricalpropertieswerecomparedbetweenIWOandITOfilmsafterirradiation.Thevariationsofdefectsinfilmsbeforeandafterirradiationweremeasuredbypositronannihilationtechnique(PAT).Asaresult,oxygenvacancydefectswereemergedinITOandIWOfilmsafterirradiationespeciallyinthesurfacesandinterfaces.Itisindicatedthatgammarayshaveinfluenceontransparentconductiveoxidethinfilmsbyknockingchemicalbondswithlowerbindingenergyandproducingoxygenvacancies.Recombinationbetweendifferentelementsandoxygenmaybeselectivewhilechemicalstateskeepconstant.BothITOandIWOfilmspossesssuitableanti-gammaraysirradiationproperties.AndIWOfilmsaremoreappropriateasanti-gammaraysprotectivecoatingsindeepspaceexplorationthanITOfilms.

Key words: tungsten-dopedindiumoxidethinfilms, tin-dopedindiumoxidethinfilms, gammarays, opticalandelectricalproperties, positronannihilationtechnique