Chinese Space Science and Technology ›› 2017, Vol. 37 ›› Issue (4): 75-83.doi: 10.16708/j.cnki.1000-758X.2017.0065
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OUYANG Qi , WANG Wen-Wen*, HAO Wei-Chang
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Abstract: Tungstendopedindiumoxidethinfilms(In2O3: W,IWO)withgoodopticalandelectricalpropertieswerepreparedonglasssubstratesbyradiofrequency(RF)reactivemagnetronsputteringmethod.Tindopedindiumoxidethinfilms(In2O3: Sn,ITO)werepurchasedindustrialproduction.Allthesefilmswereirradiatedbygammarayswithdifferentamountoffluxinagroundbasedsimulationsystemclosetotheenvironmentofdeepspace.Changesincharacteristicsincludingmicrostructure,surfacemorphology,chemicalstates,opticalandelectricalpropertieswerecomparedbetweenIWOandITOfilmsafterirradiation.Thevariationsofdefectsinfilmsbeforeandafterirradiationweremeasuredbypositronannihilationtechnique(PAT).Asaresult,oxygenvacancydefectswereemergedinITOandIWOfilmsafterirradiationespeciallyinthesurfacesandinterfaces.Itisindicatedthatgammarayshaveinfluenceontransparentconductiveoxidethinfilmsbyknockingchemicalbondswithlowerbindingenergyandproducingoxygenvacancies.Recombinationbetweendifferentelementsandoxygenmaybeselectivewhilechemicalstateskeepconstant.BothITOandIWOfilmspossesssuitableanti-gammaraysirradiationproperties.AndIWOfilmsaremoreappropriateasanti-gammaraysprotectivecoatingsindeepspaceexplorationthanITOfilms.
Key words: tungsten-dopedindiumoxidethinfilms, tin-dopedindiumoxidethinfilms, gammarays, opticalandelectricalproperties, positronannihilationtechnique
OUYANG Qi , WANG Wen-Wen, HAO Wei-Chang. Researchongammaraysirradiationresistancepropertiesoftransparentconductiveoxidethinfilms[J]. Chinese Space Science and Technology, 2017, 37(4): 75-83.
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URL: https://journal26.magtechjournal.com/kjkxjs/EN/10.16708/j.cnki.1000-758X.2017.0065
https://journal26.magtechjournal.com/kjkxjs/EN/Y2017/V37/I4/75