A MODEL FOR INTERFACIAL CHEMICAL BINDING ENHANCEMENT OF THIN FILM BY MeV ION IRRADIATION

Abstract

Abstract: Theortical model,based on concepts of the formation of newinterfacial bonds,for the adhesion enhancement of thin film induced byMeV ion irradiation have been proposed in this paper.A new analyticalrelationship of the threshold doses,including ion track density,electronicstopping power and interfacial bond energy etc.has been given.It is foundthat the calculating results by using the model is in good agreement withthe experiment results reported by literatures.

Key words: Thin film, Interface, Adhesion, Ion irradiation, Research

Yang Dequan (Lanzhou Institute of Physics). A MODEL FOR INTERFACIAL CHEMICAL BINDING ENHANCEMENT OF THIN FILM BY MeV ION IRRADIATION[J]. Chinese Space Science and Technology.

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A MODEL FOR INTERFACIAL CHEMICAL BINDING ENHANCEMENT OF THIN FILM BY MeV ION IRRADIATION

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