Abstract: ThecharacteristicsandeffectsofanalogCMOSintegratedcircuitonspacecraftwereanalyzedintheradiationenvironment.Basedonthegenerationofradiationeffect,themainanti-radiationdesignmethodswereintroducedfortheanalogCMOSintegratedcircuitdesigningandprocessing.Intheouterspace,thresholdvoltagedeviation,transdiodedecreasing,substrateleakagecurrentincreasingandcornernoiseamplitudeincreasingoccurtotheCMOSsemiconductorcomponentsintheanalogCMOSintegratedcircuit.Asaresult,therearethreekindsofmethodsproposedtoprotectagainstradiationoftheanalogintegratedcircuits,includinganti-radiationanalogCMOSintegratedcircuit′,anti-radiationPCB′andsilicononinsulatoranti-radiationprocessing.Accordingly,thedesignedanti-radiationanalogCMOSintegratedcircuitsobtaintheidealeffectinantiradiationfunction.

Key words: Complementarymetaloxidesemiconductor, Thresholdvoltage, Transconductance, Antiradiation, Silicononinsulator, Spaceenvironment, Spacecraft